r-1 plastic-encapsulate diodes 1 h igh diode semiconductor r-1 features i o 0.5a vrrm 1000v-2000v high surge current capability applications rectifier marking polarity: color band denotes cathode 1fx x:from 10 to 20 1f10 thru 1F20 fast recovery rectifier 1f item symbol unit conditions repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, resistance load, ta=50 0.5 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle, ta=25 25 junction temperature t j -55~+125 storage temperature t stg -55~+125 electrical characteristics (t a =25 unless otherwise specified) 1f item symbol unit conditions peak forward voltage v fm v i fm =0.5a 1.8 i rrm1 t a =25 5 peak reverse current i rrm2 rm =v rrm t a =100 100 reverse recovery time t rr ns i f =0.5a i r =1a i rr =0.25a thermal resistance(typical) r j-a /w between junction and ambient 50 10 12 14 300 a v v rms v maximum rms voltage 15 16 18 20 10 12 14 15 16 18 20 1000 1200 1400 1500 1600 1800 2000 700 840 980 1050 1120 1260 1400
typical characteristics 2 h igh diode semiconductor 0 50 150 fig.1: forward current derating curve io(a) single phase half wave 60hz resistive or inductive load 0.375''(9.5mm) lead length 100 0.1 0.2 0.3 0.4 0.5 0 fig.4:typical reverse characteristics voltage(%) ir(ua) tj=25 tj=125 tj=100 0.01 0.1 0 20 40 60 80 100 1.0 10 100 1000 ifsm(a) number of cycles fig.2 : maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 1 2 10 20 100 15 20 25 40 50 v r d r l i f 0 if i r i rr t t rr i fig.5: diagram of circuit and testing wave form of reverse recovery time 10
3 jshd jshd h igh diode semiconductor r-1 dia unit: in inches (millimeters) dia 1.0(25.4) min .130(3.30) .118(3.00) .025(0.64) .021(0.53) .107(2.70) .080(2.00) 1.0(25.4) min
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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